 Akos emphasizes in research and development. We believe this is the key element to keep us growing.
We have dedicated resources on a number of research areas and have developed strength by virtue of the cumulated talents, research achievements, research infrastructure and social impacts. Research achievements of Akos are in areas of:
Journal and papers published by our professionals includes areas of Indoor and Environment"Quantification of Indoor TVOC Levels from Different Sources in Mechanically Ventilated Building"s, "Quantification of Indoor VOCs in Twenty Mechanically Ventilated Buildings in Hong Kong", "Feasibility Study of an Indoor Air Quality Measurement Protocol on 12 Parameters in Mechanically Ventilated and Air Conditioned Buildings", Journal of Indoor + Built Environment, Vol. 10(1), pp. 3-19, 2001 "Characterization of Volatile Organic Compounds in Office/ Residential Buildings in Hong Kong", "Characterization of Volatile Organic Compounds in Office Buildings in Hong Kong", "Development of Demand Control Strategy in Buildings Using Radon and Carbon Dioxide Level"s, [ TOP ] Air Purification System"The Use of Zeolite and Oxidant Generating Devices in Air Cleaning", "Confined Catalytic Oxidation of Volatile Organic Compounds by Transition Metal Containing Zeolites and Ionizer", "The Use of Synthetic Zeolite in Indoor Air Quality Control", [ TOP ] Chemistry of Materials"Synthesis of elliptical vanadoborates housing bimetallic centers [Zn4-(B2O4H2)(V10B28O74H8)] 8- and [Mn-4(C2O4)(V10B28O74H8)]10-, Chemical Communications", (14): 1827-1829 2005 "Organically Modified Transition Metal Vanadates: New Directions in Polyoxometallate Clusters, "Cyclic Vanadate Ligands in Two New Porous Oxide Solids", "New Organo-ceramic Hybrid Materials in the Transition Metal Vanadate System", "Synthesis and Magnetic Studies of Organotemplated Manganese Divanadates", "Synthesis and Properties of Vanadoborate Cluster Materials", "Synthesis of Porous Metalloborate Cluster Materials", "Electronic Structure and Molecular Magnetism of Vanadium Borate Clusters with Partial Spin Pairing", [ TOP ] Device Characterization"SOI flash memory scaling limit and design consideration based on 2-D analytical modeling," "Multi-bit MONOS Nonvolatile Mmeory Based on Double-Gate Technology," "Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cell," "Transient Behavior of Partially Depleted SOI Non-Volatile Memory Cell and Its Impacts on Device Scaling," "Improved Oxide Quality on Polysilicon by Enhanced Metal-Induced-Lateral-Crystallization (MILC)," "High quality thermal oxide on LPSOI formed by high temperature enhanced MILC," "Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film," C "Improved Thin Dielectric Characteristics on Chemical-Mechanically Polished Polycrystalline Silicon Film," "Direct Tunneling Stress-Induced Leakage Current in NMOS Devices with Ultra-thin Gate Oxide," accepted for IRPS 05 "Optimization of Base-to-Emitter Spacer Thickness to Maximize the Frequency Response of Bipolar Transistors," "Optimizations of Spacer Thickness for Minimizing Noise Performance of Bipolar Transistors", "A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM," "A 2-bit MONOS nonvolatile memory cell based on asymmetric double gate MOSFET structure," [ TOP ]
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